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| TetraFET D5050UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W - 50V - 30MHz SINGLE ENDED FEATURES * SIMPLIFIED AMPLIFIER DESIGN F G H K I J * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss DMX PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE * SIMPLE BIAS CIRCUITS * LOW NOISE DIM mm A 28.83 B 21.97 C 45 D 6.86 E 3.43 Dia. F 5.84 G 13.97 Dia. H 6.60 I 0.13 J 3.81 K 2.54 M 27.94 Tol. 0.13 0.13 5 0.13 0.13 0.13 0.13 REF 0.02 0.25 0.13 0.51 Inches 1.135 0.865 45 0.27 0.135 Dia. 0.230 0.550 Dia. 0.260 0.005 0.15 0.100 1.10 Tol. 0.005 0.005 5 0.005 0.005 0.005 0.005 REF 0.001 0.01 0.005 0.02 * HIGH GAIN - 20 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 500W 125V 20V 36A -65 to 150C 200C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6071 Issue 1 D5050UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 50V VGS = 20V ID = 10mA VDS = 10V PO = 300W VDS = 50V f = 30MHz VDS = 50V VDS = 50V VDS = 50V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 1.2A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 6A 1 9.6 20 50 20:1 125 Typ. Max. Unit V 12 12 7 mA A V S dB % -- 720 300 18 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 0.35C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6071 Issue 1 |
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